FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.
5dBm at 11.
7GHz to 12.
7GHz ･HIGH GAIN G1dB= 9.
5dB at 11.
7GHz to 12.
7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1112-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 10V IDSset= 1.
0A f=11.
7 to 12.
7 GHz UNIT dBm dB A Gain Flatness G dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 24.
0dBm, f= 5MHz (S...

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