Part Number
|
TGI7785-60LHA |
Manufacturer
|
Toshiba |
Description
|
MICROWAVE POWER GaN HEMT |
Published
|
Jun 20, 2020 |
Detailed Description
|
MICROWAVE POWER GaN HEMT
TGI7785-60LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 48.0dBm at Pin= 41...
|
Datasheet
|
TGI7785-60LHA
|
Overview
MICROWAVE POWER GaN HEMT
TGI7785-60LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 48.
0dBm at Pin= 41dBm ŋHIGH GAIN
GL= 11.
5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.
) at Pout= 29dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN.
TYP.
MAX.
Output Power Drain Current Power Added Efficiency
Pout IDS1 add
VDS= 40V IDSset= 0.
4A f= 7.
7 to 8.
5GHz @Pin= 41dBm
dBm 47.
0 48.
0
A
4.
0
4.
5
%
32
Linear Gain Gain flatness
GL @Pin= 20dBm
G
dB
10.
5 11.
5
dB
0.
8
3rd Order Intermodulation Distortion
Drain Current Channel Temperature Ris...
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