Part Number
|
TIM0910-4 |
Manufacturer
|
Toshiba |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Jun 20, 2020 |
Detailed Description
|
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 9.5GHz to 10.5GHz ・HIGH GAIN
G1dB= 7.5dB at 9.5...
|
Datasheet
|
TIM0910-4
|
Overview
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.
5dBm at 9.
5GHz to 10.
5GHz ・HIGH GAIN
G1dB= 7.
5dB at 9.
5GHz to 10.
5GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM0910-4
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB G1dB IDS
VDS= 9V IDSset= 2.
0A f= 9.
5 to 10.
5GHz
UNIT dBm dB
A
Power Added Efficiency
add
%
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN.
35.
5 6.
5
TYP.
MAX.
36.
5
7.
5
1.
7
2.
2
24
70
ELECTRICAL CHARACTERISTICS ( T...
Similar Datasheet