FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.
0dBm at 7.
7GHz to 8.
5GHz ･HIGH GAIN G1dB= 8.
5dB at 7.
7GHz to 8.
5GHz ･LOW INTERMODULATION DISTORTION IM3(MIN.
)= -44dBc at Pout= 34.
0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-30UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 6.
4A f = 7.
7 to 8.
5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 34.
0dBm, f= 5MHz ...

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