FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.
0dBm at 5.
9GHz to 6.
4GHz ･HIGH GAIN G1dB= 10.
0dB at 5.
9GHz to 6.
4GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-30UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 6.
4A f = 5.
9 to 6.
4GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 34.
0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X ...

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