MICROWAVE POWER GaAs FET TIM5964-35SLA-422 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.
5dBm at 5.
85GHz to 6.
75GHz ŋHIGH GAIN G1dB= 8.
0dB at 5.
85GHz to 6.
75GHz ŋLOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 8.
0A f= 5.
85 to 6.
75GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Tes...

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