Part Number
|
TIM1314-30L |
Manufacturer
|
Toshiba |
Description
|
MICROWAVE POWER GaAs FET |
Published
|
Jun 20, 2020 |
Detailed Description
|
MICROWAVE POWER GaAs FET
TIM1314-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 13.75GHz t...
|
Datasheet
|
TIM1314-30L
|
Overview
MICROWAVE POWER GaAs FET
TIM1314-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.
0dBm at 13.
75GHz to 14.
5GHz ŋHIGH GAIN
G1dB= 5.
0dB at 13.
75GHz to 14.
5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.
) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 7.
0A f= 13.
75 to 14.
5GHz
UNIT dBm dB
A dB
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
add IM3 IDS2 Tch
%
Two-Tone ...
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