FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 46.
5dBm at 6.
4GHz to 7.
2GHz ･HIGH GAIN G1dB= 8.
0dB at 6.
4GHz to 7.
2GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.
5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-45SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 9.
0A f = 6.
4 to 7.
2GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 35.
5dBm, f= 5MHz (Singl...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)