Freescale Semiconductor Technical Data
RF Power Field Effect
Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz.
Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
• Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA,
Pout = 300 Watts, f = 220 MHz Power Gain — 25.
5 dB Drain Efficiency — 68%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power
Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • 225°C Capab...