Freescale Semiconductor Technical Data
RF Power LDMOS
Transistor
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for mobile two--way radio applications with frequencies from 136 to 941 MHz.
The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in mobile radio equipment.
Narrowband Performance (12.
5 Vdc, IDQ = 100 mA, TA = 25C, CW)
Frequency (MHz)
Gps
D
Pout
(dB)
(%)
(W)
870 (1)
17.
2
77.
0
16
Wideband Performance (12.
5 Vdc, TA = 25C, CW)
Frequency (MHz)
Pin
Gps
D
Pout
(W)
(dB)
(%)
(W)
136--174
0.
38
16.
0
60.
0
15
350--470 760--870 (2)
0.
23
18.
5
60.
0
16
0.
...