Freescale Semiconductor Technical Data
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz.
The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment.
Narrowband Performance (13.
6 Vdc, IDQ = 500 mA, TA = 25°C, CW)
Frequency (MHz)
Gps (dB)
ηD
P1dB
(%)
(W)
764
18.
0
74.
1
32
870
17.
2
71.
0
31
941
15.
7
68.
1
31
800 MHz Broadband Performance (13.
6 Vdc, IDQ = 100 mA, TA = 25°C, CW)
Frequency (MHz)
Gps (dB)
ηD
P1dB
(%)
(W)
760
15.
7
62.
0
44
820...