isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STB32NM50N
·DESCRIPTION ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
.
·Switching applications
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current-continuous@ TC=25℃
22
A
ID(puls)
Pulse Drain Current
88
A
Ptot
Total Dissipation@TC=25℃
190
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARA...