isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
AOB7S65L
·FEATURES ·High speed switching ·Low gate input resistance ·Standard level gate drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous@TC=25℃
7
IDM
Drain Current-Single Pulsed
30
PD
Total Dissipation
104
Tj
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Chan...