isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
AOTF4N60
·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
7 2.
5
16
PD
Total Dissipation
35
Tj
Operating Junction Temperature
-50~150
Tstg
Storage Temperature
-50~150
UNIT V V A A W ℃ ℃
·THERMA...