isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
AOTF2618L
·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·The most efficient high frequency switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
22 16
70
PD
Total Dissipation
23.
5
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UN...