isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FCPF16N60
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.
26Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Be suitable for various AC/DC power conversion in switching mode
operation for system miniaturization and higher efficiency.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
16
IDM
Drain Current-Single Pulsed
48
PD
Total Dissipation @TC=25℃
38
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperatur...