isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FCPF400N80ZCN
·FEATURES · Drain-source on-resistance:
RDS(on) ≤ 0.
4Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·AC-DC Power Supply ·LED Lighting
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
14
IDM
Drain Current-Single Pulsed
33
PD
Total Dissipation @TC=25℃
36
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Cha...