Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
FCPF650N80Z
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·ESD improved capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·Load switch ·Power management
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
10 6.
3
24
PD
Total Dissipation @TC=25℃
30.
5
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
U...