isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-252(DPAK) packaging ·UIS capability ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·Switching applications
INCHANGE Semiconductor
FDD9407
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
40
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
100
IDM
Drain Current-Single Pulsed
500
PD
Total Dissipation
227
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case ...