| Part Number | FQL40N50 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQL40N50 ·FEATURES ·High breakdown voltage ·Fast Switching Speed ·100% avalanche tested ·... |
| Features |
·High breakdown voltage ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High speed power switching ·Power factor correction,motor drive and welding machine ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR... |
| File Size | 196.38KB |
| Datasheet |
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FQL40N50 : This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 40 A, 500 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 20 A • Low Gate Charge (Typ. 155 nC) • Low Crss (Typ. 95 pF) • 100% Avalanche Tested D GDS TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR.
FQL40N50F : This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 40 A, 500 V, RDS(on) = 110 mΩ (Max.) @ VGS = 10 V, ID = 20 A • Low Gate Charge (Typ. 155 nC) • Low Crss (Typ. 95 pF) • 100% Avalanche Tested • Fast Recovery Body Diode (Max. 250 ns) D GDS TO-264 Absolute Maximum Ratings TC = 25°C unless otherwis.