isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IPU60R600C6
·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
7.
3 4.
6
19
PD
Total Dissipation
63
Tj
Operating Junction Temperature
-50~150
Tstg
Storage Temperature
-50~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS...