isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF3205S
·DESCRIPTION ·Drain Current ID=110A@ TC=25℃ ·Drain Source Voltage
: VDSS= 55V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
.
·Designed for high current, high speed switching, switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
55
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
110
A
IDM
Pulse Drain Current
390
A
Ptot
Total Dissipation@TC=25℃
200
W
Tj
Max.
Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~...