isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STP6N80K5
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤1.
6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Be suitable for synchronous rectification for server and
general purpose applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
4.
5
IDM
Drain Current-Single Pulsed
18
PD
Total Dissipation @TC=25℃
85
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A...