Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STP6NK90ZFP
·FEATURES ·Typical RDS(on)=1.
56Ω ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Ideal for off-line powersupplies adaptors and PFC ·Lighting ·High current,high speed switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
900
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
5.
8 3.
65
23.
2
PD
Total Dissipation
30
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V ...