Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXTA60N10T
·FEATURES ·With TO-263(D2PAK) packaging ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
60
IDM
Drain Current-Single Pulsed
180
PD
Total Dissipation
176
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Chann...