isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·PFC stages ·Power supply ·Switching applications
INCHANGE Semiconductor
IXTH40N50L2
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
40
IDM
Drain Current-Single Pulsed
80
PD
Total Dissipation
540
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBO...