Isc N-Channel MOSFET
Transistor
·FEATURES ·Typical RDS(on)=0.
0027Ω ·With low gate drive requirements ·High avalanche ruggedness ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
STP105N3LL
·APPLICATIONS ·Solenold and relay dirvers ·DC-DC &DC-CA converters ·Automotive environment
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
30
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±20
150 105
320
PD
Total Dissipation
140
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃...