isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
STW28NM50N
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±25
21 13
84
PD
Total Dissipation
150
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERI...