Isc P-Channel MOSFET
Transistor
·FEATURES ·TrenchFET® Power MOSFET ·175 °C Junction Temperature ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Power Supply
- Secondary Synchronous Rectification ·Power tools ·Motor drive switch ·Battery management
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-100
VGSS ID IDM PD Tch
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
（ TJ=150℃）
TC=125℃
TA=25℃
TA=125℃
Drain Current-Single Pulsed(t=100μs)
Total Dissipation @TC=25℃ TC=70℃ TA=25℃ TA=70℃
Max.
Operating Junction Temperature
±20
-37.
1 -31 -9.
2 -7.
7
-40
136 95 8.
3 5.
8
-5...