Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
SUP90N10-8M8P
·FEATURES ·TrenchFET® Power MOSFET ·175 °C Junction Temperature ·100 % Rg and UIS Tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Power Supply
- Secondary Synchronous Rectification ·Industrial ·Primary Switch
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃
（ TJ=175℃）
TC=70℃
Drain Current-Single Pulsed
±20
90 90
240
PD
Total Dissipation @TC=25℃
300
Tch
Max.
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W...