Isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
MMF80R650PTH
·FEATURES ·Low power loss ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·Motor control ·DC – DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
8 5.
05
24
PD
Total Dissipation
32
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...