isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
SMK0990CI
·FEATURES ·New revolutionary high voltage technology ·With TO-3PN package ·Drain-Source breakdown voltage:BVDSS=900V(Min.
) ·Low drain-source On resistance: RDS(on)=1.
4Ω (Max.
) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
900
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
9 5.
7
36
PD
Total Dissipation
130
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
...