isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-emitter sustaining voltage VCEO(SUS)= 90V(Min) ·High saturation voltage ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high-current, high-speed switching
circuits such as:low-distortion power amplifiers,oscillators, switching
regulators, series
regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO(SUS) Collector-Emitter Voltage
50
V
VCER(SUS) Collector-Emitter Voltage RBE= 50Ω
75
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-C...