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2N5302

Part Number 2N5302
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 4, 2020
Detailed Description isc Silicon NPN Power Transistors INCHANGE Semiconductor 2N5302 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(s...
Datasheet 2N5302





Overview
isc Silicon NPN Power Transistors INCHANGE Semiconductor 2N5302 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.
75V(Max.
)@ IC= 10A ·Wide Area of Safe Operation ·Complement to Type 2N4399 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for use in power amplifier and switching circuits applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.
5 A PC Collector Power Dissipation@TC=25℃ 200 W...






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