isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2N6130
DESCRIPTION ·DC Current Gain-
: hFE = 20-100@ IC= 2.
5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min) ·Complement to Type 2N6133 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power amplifier and switching circuits
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
2
A
50
W
150
℃
...