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2N6579

Part Number 2N6579
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 4, 2020
Detailed Description isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6579 DESCRIPTION ·Excellent Safe Operating Area ·High Voltag...
Datasheet 2N6579




Overview
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N6579 DESCRIPTION ·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 350V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Off-line power supplies ·Switching amplifiers ·Inverters/Converters ·Motor speed control circuits ·Switching regulator ·Solenoid& relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 9.
0 V IC Collector Current-Continuous 10 A ICM Collector Cur...






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