isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
2SC897
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
12
A
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature...