isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 900V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching
regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.
5
A
50
W
150
℃
Tstg
Storage Temperature Range
-55...