isc Silicon
NPN Power
Transistors
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 200V(Min) ·Complement to Type 2SA1306B ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
2SC3298B
200
V
VCEO
Collector-Emitter Voltage
2SC3298B
200
V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
V
1.
5
A
...