isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector Current: IC= 7A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal deflection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
350
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
10
A
IC(surge) Collector Current-Surge
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
20
A
40
W
150
℃
Tstg
Storage Tempe...