isc Silicon
NPN Darlington Power
Transistor
INCHANGE Semiconductor
2SD1286-Z
DESCRIPTION ·With TO-252(DPAK) packaging ·Very high DC current gain ·Monolithic darlington
transistor with integrated
antiparallel collector-emitter diode ·Complement to type 2SB963-Z ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator
regulator
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM PT Tj
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Total Power Dissipation Max.
Junction Temperature
60
V
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