INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
2SD1409A
DESCRIPTION ·High collector-emitter breakdown voltage-
: V(BR)CEO= 400V(Min) ·High DC current Gain
: hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Igniter applications ·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power D...