isc Silicon
NPN Darlington Power
Transistor
Inchange Semiconductor
2SD2488
DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio ,
regulator and general purpose
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
130
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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