INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
2ST501T
DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio power amplifiers ·Relay & solenoid drivers ·Motor controls ·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO(SUS) Collector-Emitter Voltage
330
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
12
A
100
W
150
℃
Tstg
Storag...