isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
3DD167E
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
PD
Total Power Dissipation@TC=75℃
150
W
TJ
Max.
Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
THERMAL CHARA...