isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.
) ·DC Current Gain-
: hFE= 30~250(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
5V(Max)@ IC= 2.
5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for B&W TV horizontal output , regulated power
supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50-200
V
VCEO
Collector-Emitter Voltage
50-200 V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
7.
5
A
PC
Collector Power Dissipation@TC=75℃
50
W
TJ
Junc...