isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
A0718
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-140
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-2
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc websi...