isc Silicon
PNP Power
Transistor
INCHANGE Semiconductor
BD242/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.
0A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BD242; -60V(Min)- BD242A -80V(Min)- BD242B; -100V(Min)- BD242C
·Complement to Type BD241/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BD242
-55
BD242A
-70
VCBO
Collector-Base Voltage
V
BD242B
-90
BD242C
-115
BD242
-45
BD242A
-60
VCEO
Collector-Emitter Voltage
V
BD242B
-80
BD242C -100
VE...