isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector Current -IC= 25A ·Complement to Type BD250/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD249
55
VCER
Collector-Emitter Voltage (RBE= 100Ω)
BD249A BD249B
70 90
V
BD249C
115
BD249
45
VCEO
Collector-Emitter Voltage
BD249A
60
V
BD249B
80
BD249C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
40
A
IB
Base Current
Collector Power Dissipation
PC
@ Ta=25℃ C...