isc Silicon
NPN Darlington Power
Transistor
INCHANGE Semiconductor
BD683
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 120V(Min.
) ·DC Current Gain—
: hFE = 750(Min)@ IC= 1.
5A ·Complement to Type BD684 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as output devices in complementary
general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Ti
Junction...